
DS1270AB Series
Manufacturer: Analog Devices Inc./Maxim Integrated
IC NVSRAM 16MBIT PARALLEL 36EDIP
| Part | Operating Temperature (Min) | Operating Temperature (Max) | Memory Interface (Type) | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Memory Size | Memory Width | Memory Depth | Package Name | Package Length | Package Width | Technology | Mounting Type | Memory Format | Write Cycle Time - Word | Write Cycle Time - Page | Memory Type | Access Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated | 0 °C | 70 °C | Parallel | 5.25 V | 4.75 V | 16 Mb | 8 bit | 2 M | 36-DIP Module 36-EDIP | 0.61 in | 15.49 mm | NVSRAM (Non-Volatile SRAM) | Through Hole | NVSRAM | 70 ns | 70 ns | Non-Volatile | 70 ns |
Analog Devices Inc./Maxim Integrated | 0 °C | 70 °C | Parallel | 5.25 V | 4.75 V | 16 Mb | 8 bit | 2 M | 36-DIP Module 36-EDIP | 0.61 in | 15.49 mm | NVSRAM (Non-Volatile SRAM) | Through Hole | NVSRAM | 100 ns | 100 ns | Non-Volatile | 100 ns |
Analog Devices Inc./Maxim Integrated | 0 °C | 70 °C | Parallel | 5.25 V | 4.75 V | 16 Mb | 8 bit | 2 M | 36-DIP Module 36-EDIP | 0.61 in | 15.49 mm | NVSRAM (Non-Volatile SRAM) | Through Hole | NVSRAM | 100 ns | 100 ns | Non-Volatile | 100 ns |
Analog Devices Inc./Maxim Integrated | -40 °C | 85 °C | Parallel | 5.25 V | 4.75 V | 16 Mb | 8 bit | 2 M | 36-DIP Module 36-EDIP | 0.61 in | 15.49 mm | NVSRAM (Non-Volatile SRAM) | Through Hole | NVSRAM | 70 ns | 70 ns | Non-Volatile | 70 ns |
Analog Devices Inc./Maxim Integrated | 0 °C | 70 °C | Parallel | 5.25 V | 4.75 V | 16 Mb | 8 bit | 2 M | 36-DIP Module 36-EDIP | 0.61 in | 15.49 mm | NVSRAM (Non-Volatile SRAM) | Through Hole | NVSRAM | 70 ns | 70 ns | Non-Volatile | 70 ns |
Analog Devices Inc./Maxim Integrated | -40 °C | 85 °C | Parallel | 5.25 V | 4.75 V | 16 Mb | 8 bit | 2 M | 36-DIP Module 36-EDIP | 0.61 in | 15.49 mm | NVSRAM (Non-Volatile SRAM) | Through Hole | NVSRAM | 70 ns | 70 ns | Non-Volatile | 70 ns |