IC FLASH 256MBIT PAR 48TSOP I
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Memory Size | Technology | Mounting Type | Memory Type | Supplier Device Package | Memory Interface | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Organization | Access Time | Package / Case | Package / Case [y] | Package / Case [y] | Memory Format |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. NAND256W3A2BNXE | 85 °C | -40 °C | 256 Gbit | FLASH - NAND | Surface Mount | Non-Volatile | 48-TSOP I | Parallel | 2.7 V | 3.6 V | 32 M | 50 ns | 48-TFSOP | 18.4 mm | 0.724 in | FLASH |
Micron Technology Inc. NAND256W3A0BN6F TR | 85 °C | -40 °C | 256 Gbit | FLASH - NAND | Surface Mount | Non-Volatile | 48-TSOP I | Parallel | 2.7 V | 3.6 V | 32 M | 50 ns | 48-TFSOP | 18.4 mm | 0.724 in | FLASH |
Micron Technology Inc. NAND256W3A2BZA6F TR | 85 °C | -40 °C | 256 Gbit | FLASH - NAND | Surface Mount | Non-Volatile | 55-VFBGA (8x10) | Parallel | 2.7 V | 3.6 V | 32 M | 50 ns | 55-TFBGA | FLASH | ||
Micron Technology Inc. NAND256W3A2BZAXE | 85 °C | -40 °C | 256 Gbit | FLASH - NAND | Surface Mount | Non-Volatile | 55-VFBGA (8x10) | Parallel | 2.7 V | 3.6 V | 32 M | 50 ns | 55-TFBGA | FLASH | ||
Micron Technology Inc. NAND256W3A2BZA6E | 85 °C | -40 °C | 256 Gbit | FLASH - NAND | Surface Mount | Non-Volatile | 55-VFBGA (8x10) | Parallel | 2.7 V | 3.6 V | 32 M | 50 ns | 55-TFBGA | FLASH |