AR4 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 1.8A TO277A
| Part | Mounting Type | Technology | Voltage - DC Reverse (Vr) (Max) | Package / Case | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Capacitance | Current - Average Rectified (Io) | Current - Reverse Leakage | Voltage - Forward (Vf) (Max) | Package Name | Reverse Recovery Time (trr) | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Surface Mount | Avalanche | 1 kV | 3-PowerDFN TO-277 | 500 ns | 200 mA | 175 °C | -55 °C | 55 pF | 1.8 A | 10 µA | 1.9 V | TO-277A (SMPC) | 120 ns | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | Avalanche | 600 V | 3-PowerDFN TO-277 | 500 ns | 200 mA | 175 °C | -55 °C | 77 pF | 2 A | 10 µA | 1.6 V | TO-277A (SMPC) | 140 ns | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | Avalanche | 200 V | 3-PowerDFN TO-277 | 500 ns | 200 mA | 175 °C | -55 °C | 77 pF | 2 A | 10 µA | 1.6 V | TO-277A (SMPC) | 140 ns | Automotive | AEC-Q101 |
Vishay General Semiconductor - Diodes Division | Surface Mount | Avalanche | 1 kV | 3-PowerDFN TO-277 | 500 ns | 200 mA | 175 °C | -55 °C | 55 pF | 1.8 A | 10 µA | 1.9 V | TO-277A (SMPC) | 120 ns | Automotive | AEC-Q101 |
Vishay General Semiconductor - Diodes Division | Surface Mount | Avalanche | 800 V | 3-PowerDFN TO-277 | 500 ns | 200 mA | 175 °C | -55 °C | 55 pF | 1.8 A | 10 µA | 1.9 V | TO-277A (SMPC) | 120 ns | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | Avalanche | 200 V | 3-PowerDFN TO-277 | 500 ns | 200 mA | 175 °C | -55 °C | 77 pF | 2 A | 10 µA | 1.6 V | TO-277A (SMPC) | 140 ns | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | Avalanche | 1 kV | 3-PowerDFN TO-277 | 500 ns | 200 mA | 175 °C | -55 °C | 55 pF | 1.8 A | 10 µA | 1.9 V | TO-277A (SMPC) | 120 ns | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | Avalanche | 800 V | 3-PowerDFN TO-277 | 500 ns | 200 mA | 175 °C | -55 °C | 55 pF | 1.8 A | 10 µA | 1.9 V | TO-277A (SMPC) | 120 ns | Automotive | AEC-Q101 |
Vishay General Semiconductor - Diodes Division | Surface Mount | Avalanche | 600 V | 3-PowerDFN TO-277 | 500 ns | 200 mA | 175 °C | -55 °C | 77 pF | 2 A | 10 µA | 1.6 V | TO-277A (SMPC) | 140 ns | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | Avalanche | 600 V | 3-PowerDFN TO-277 | 500 ns | 200 mA | 175 °C | -55 °C | 77 pF | 2 A | 10 µA | 1.6 V | TO-277A (SMPC) | 140 ns |