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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Gate Charge (Max) | Package / Case | FET Type | Mounting Type | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Current - Continuous Drain (Id) (Ta) | Power Dissipation (Max) | Vgs(th) (Max) | Technology | Input Capacitance (Ciss) (Max) | Rds On (Max) | Vgs (Max) | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 20.6 nC | 6-UDFN Exposed Pad | N-Channel | Surface Mount | 30 V | -55 °C | 150 °C | 10 V | 4.5 V | 9 A | 1.7 W 12.5 W | 2 V | MOSFET (Metal Oxide) | 840 pF | 14.5 mOhm | 20 V | DFN2020MD-6 |