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Nch 100V 80A, TO-263AB, Power MOSFET
Description
AI
RJ1P04BBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.
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Nch 100V 80A, TO-263AB, Power MOSFET
Nch 100V 80A, TO-263AB, Power MOSFET
| Part | Input Capacitance (Ciss) (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Operating Temperature | Package Name | Rds On (Max) | Gate Charge (Max) | Vgs (Max) | Vgs(th) (Max) | Power Dissipation (Max) | Technology | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) (Tc) | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 2410 pF | 6 V | 10 V | 150 °C | TO-263AB | 8.8 mOhm | 38 nC | 20 V | 4 V | 89 W | MOSFET (Metal Oxide) | N-Channel | 100 V | 40 A | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount |