MOSFET N-CH 100V 70A TO220-3
| Part | FET Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Power Dissipation (Max) [Max] | Technology | Package / Case | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | N-Channel | 100 V | 4.5 V 10 V | 16 mOhm | -55 °C | 175 ░C | Through Hole | 250 W | MOSFET (Metal Oxide) | TO-220-3 | 70 A | 240 nC | 4540 pF | 2 V | PG-TO220-3-1 | 20 V | ||||
Infineon Technologies | N-Channel | 100 V | 10 V | 11.6 mOhm | -55 °C | 175 ░C | Through Hole | MOSFET (Metal Oxide) | TO-220-3 | 70 A | 4 V | PG-TO220-3-1 | 20 V | 66 nC | 4355 pF | 125 W | ||||
Infineon Technologies | N-Channel | 40 V | 10 V | -55 °C | 175 ░C | Through Hole | MOSFET (Metal Oxide) | TO-220-3 | 40 nC | 4 V | PG-TO220-3-1 | 20 V | 79 W | 6.5 mOhm |