MOSFET N-CH 600V 20A TO268
| Part | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | FET Type | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Technology | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 90 nC | 350 mOhm | N-Channel | 4.5 V | 3300 pF | -55 °C | 150 °C | 300 W | TO-268AA | 600 V | 30 V | Surface Mount | 10 V | MOSFET (Metal Oxide) | 20 A | |||
IXYS | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | N-Channel | 4.5 V | 5100 pF | -55 °C | 150 °C | TO-268AA | 800 V | 20 V | Surface Mount | 10 V | MOSFET (Metal Oxide) | 20 A | 360 W | 420 mOhm | 200 nC | |||
IXYS | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 86 nC | 520 mOhm | N-Channel | 5 V | 4685 pF | -55 °C | 150 °C | TO-268AA | 800 V | 30 V | Surface Mount | 10 V | MOSFET (Metal Oxide) | 20 A | 500 W |