TP5335 Series
Manufacturer: Microchip Technology
Beta
⌘K
P-CHANNEL ENHANCEMENT MODE MOSFET
| Part | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) (Tj) | Package Length | Package Name | Package Width | Mounting Type | Package / Case | Grade | Qualification | Rds On (Max) | Input Capacitance (Ciss) (Max) | Technology | Vgs (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs(th) (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Microchip Technology | 360 mW | -55 °C | 150 °C | 350 V | 85 mA | 2 mm | 6-DFN | 2 mm | Surface Mount | 6-VDFN Exposed Pad | Automotive | AEC-Q100 | 30 Ohm | 110 pF | MOSFET (Metal Oxide) | 20 V | 10 V | 4.5 V | 2.4 V | P-Channel |
 Microchip Technology | 360 mW | -55 °C | 150 °C | 350 V | 85 mA | SOT-23-3 | Surface Mount | SC-59 SOT-23-3 TO-236-3 | Automotive | AEC-Q100 | 30 Ohm | 110 pF | MOSFET (Metal Oxide) | 20 V | 10 V | 4.5 V | 2.4 V | P-Channel | ||
 Microchip Technology | 360 mW | -55 °C | 150 °C | 350 V | 85 mA | TO-236AB (SOT23) | Surface Mount | SC-59 SOT-23-3 TO-236-3 | 30 Ohm | 110 pF | MOSFET (Metal Oxide) | 20 V | 10 V | 4.5 V | 2.4 V | P-Channel |