V12P12 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 120V 3.9A TO277A
| Part | Voltage - Forward (Vf) (Max) | Current - Average Rectified (Io) | Current - Reverse Leakage | Qualification | Grade | Mounting Type | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Package Name | Package / Case | Operating Temperature - Junction (Min) | Operating Temperature - Junction (Max) | Voltage - DC Reverse (Vr) (Max) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 800 mV 830 mV | 3.9 A 12 A | 400 µA 500 µA | AEC-Q101 | Automotive | Surface Mount | 500 ns | 200 mA | TO-277A (SMPC) | 3-PowerDFN TO-277 | -40 °C | 150 °C | 120 V | Schottky |
Vishay General Semiconductor - Diodes Division | 800 mV | 12 A | 500 µA | Surface Mount | 500 ns | 200 mA | TO-277A (SMPC) | 3-PowerDFN TO-277 | -40 °C | 150 °C | 120 V | Schottky | ||
Vishay General Semiconductor - Diodes Division | 800 mV | 12 A | 500 µA | Surface Mount | 500 ns | 200 mA | TO-277A (SMPC) | 3-PowerDFN TO-277 | -40 °C | 150 °C | 120 V | Schottky |