MCP14E9 Series

Catalog

MOSFET DRIVER LOW SIDE, 4.5V-18V SUPPLY, 3A PEAK OUT, 2.8 OHM OUTPUT, SOIC-8

Part	Gate Type	Input Type	Gate Channel	Rise Time (Typ)	Fall Time (Typ)	Package Length	Package Name	Package Width	Logic Voltage - VIH	Logic Voltage - VIL	Driven Configuration	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Number of Drivers	Channel Type	Package / Case
Microchip Technology MCP14E9-E/SN	IGBT MOSFET N-Channel P-Channel MOSFET	Inverting	N-Channel P-Channel	14 ns	17 ns	0.154 in	8-SOIC	3.9 mm	2.4 V	0.8 V	Low-Side	18 V	4.5 V	3 A	3 A	-40 °C	150 °C	Surface Mount	2	Independent
Microchip Technology MCP14E9T-E/SN	IGBT MOSFET N-Channel P-Channel MOSFET	Inverting	N-Channel P-Channel	14 ns	17 ns	0.154 in	8-SOIC	3.9 mm	2.4 V	0.8 V	Low-Side	18 V	4.5 V	3 A	3 A	-40 °C	150 °C	Surface Mount	2	Independent
Microchip Technology MCP14E9T-E/MF	IGBT MOSFET N-Channel P-Channel MOSFET	Inverting	N-Channel P-Channel	14 ns	17 ns	6 mm	8-DFN-S	5 mm	2.4 V	0.8 V	Low-Side	18 V	4.5 V	3 A	3 A	-40 °C	150 °C	Surface Mount	2	Independent	8-VDFN Exposed Pad
Microchip Technology MCP14E9-E/MF	IGBT MOSFET N-Channel P-Channel MOSFET	Inverting	N-Channel P-Channel	14 ns	17 ns	6 mm	8-DFN-S	5 mm	2.4 V	0.8 V	Low-Side	18 V	4.5 V	3 A	3 A	-40 °C	150 °C	Surface Mount	2	Independent	8-VDFN Exposed Pad
Microchip Technology MCP14E9-E/P	IGBT MOSFET N-Channel P-Channel MOSFET	Inverting	N-Channel P-Channel	14 ns	17 ns	0.3 in	8-DIP 8-PDIP	7.62 mm	2.4 V	0.8 V	Low-Side	18 V	4.5 V	3 A	3 A	-40 °C	150 °C	Through Hole	2	Independent