DIODE GEN PURP 900V 1A D-5A
| Part | Supplier Device Package | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Grade | Technology | Mounting Type | Qualification | Bidirectional Channels [custom] | Voltage - Reverse Standoff (Typ) | Current - Peak Pulse (10/1000µs) | Power - Peak Pulse | Power Line Protection | Applications | Voltage - Clamping (Max) @ Ipp [Max] | Voltage - Breakdown (Min) [Min] | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation | D-5A | 1 A | 1.55 V | 150 °C | -65 C | 200 mA 500 ns | 500 nA | 900 V | 50 ns | Military | Standard | Surface Mount | MIL-PRF-19500/585 | ||||||||||||
Microsemi Corporation | B SQ-MELF | Military | Surface Mount | MIL-PRF-19500/516 | 1 | 20.6 V | 12.73 A | 500 W | General Purpose | 39.27 V | 24.42 V | B SQ-MELF | -55 °C | 175 ░C | Zener | ||||||||||
Microsemi Corporation | D-5A | 1 A | 1.75 V | 150 °C | -65 C | 200 mA 500 ns | 1 µA | 1000 V | 60 ns | Military | Standard | Surface Mount | MIL-PRF-19500/585 | ||||||||||||
Microsemi Corporation | B SQ-MELF | Military | Surface Mount | MIL-PRF-19500/516 | 1 | 6.2 V | 39.24 A | 500 W | General Purpose | 12.71 V | 7.4 V | B SQ-MELF | -55 °C | 175 ░C | Zener | ||||||||||
Microsemi Corporation | B SQ-MELF | Military | Surface Mount | MIL-PRF-19500/516 | 1 | 9.1 V | 28.12 A | 500 W | General Purpose | 17.75 V | 10.83 V | B SQ-MELF | -55 °C | 175 ░C | Zener |