MOSFET P-CH 20V 3.2A UFM
| Part | Operating Temperature | Technology | FET Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Supplier Device Package | Mounting Type | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Vgs (Max) [Max] | Vgs (Max) [Min] | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 °C | MOSFET (Metal Oxide) | P-Channel | 3.2 A | 4.7 nC | 20 V | UFM | Surface Mount | 1 V | 93 mOhm | 6 V | -8 V | 500 mW | 290 pF | 1.5 V 4.5 V |