DMNH45M7SCT Series

40V +175°C N-Channel Enhancement Mode MOSFET

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMNH45M7SCT	-55 °C	175 ░C	TO-220-3	N-Channel	6 mOhm	MOSFET (Metal Oxide)	Through Hole	64.7 nC	TO-220-3	20 V	240 W	4043 pF	3 V	220 A	40 V	10 V

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• Low Input Capacitance

• Low Input/Output Leakage

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation enhancement mode MOSFET is designed to minimize RDS(ON)yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.