L6399 Series

High voltage high and low-side driver

Catalog

High voltage high and low-side driver

Part	Operating Temperature [Max]	Operating Temperature [Min]	Number of Drivers	Voltage - Supply [Max]	Voltage - Supply [Min]	Logic Voltage - VIL, VIH	Driven Configuration	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Input Type	Package / Case	Package / Case [y]	Package / Case [x]	Channel Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Gate Type	Supplier Device Package	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]
STMicroelectronics L6399D	150 °C	-40 °C	2	20 V	10 VDC	1.1 V 1.9 V	Half-Bridge	430 mA	290 mA	Inverting Non-Inverting	8-SOIC	3.9 mm	0.154 in	Independent	35 ns	75 ns	IGBT N-Channel MOSFET	8-SOIC	Surface Mount	600 V

Catalog

High voltage high and low-side driver

Key Features

• Driver current capability:

- 290 mA source

- 430 mA sink

Description

The L6399 is a high voltage device manufactured using BCD™ "offline" technology. It is a single- chip half bridge gate driver for N-channel power MOSFETs or IGBTs. The high-side (floating) section is designed to withstand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy microcontroller/DSP interfacing.