DMP2110UFDB Series

Dual P-Channel Enhancement Mode MOSFET

Catalog

Dual P-Channel Enhancement Mode MOSFET

Part	Power - Max [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Configuration	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs
Diodes Inc DMP2110UFDB-7	820 mW	U-DFN2020-6 (Type B)	3.2 A	443 pF	75 mOhm	MOSFET (Metal Oxide)	20 V	1 V	2 P-Channel	6-UDFN Exposed Pad	Surface Mount	-55 °C	150 °C	12.7 nC
Diodes Inc DMP2110UFDB-13	820 mW	U-DFN2020-6 (Type B)	3.2 A	443 pF	75 mOhm	MOSFET (Metal Oxide)	20 V	1 V	2 P-Channel	6-UDFN Exposed Pad	Surface Mount	-55 °C	150 °C	12.7 nC

Catalog

Dual P-Channel Enhancement Mode MOSFET

Key Features

• PCB Footprint of 4mm2

• Low On-Resistance

• Low Input Capacitance

• Low Profile, 0.6mm Maximum Height

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.