20V P-Channel Enhancement Mode MOSFET
20V P-Channel Enhancement Mode MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Package / Case | Power Dissipation (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Technology | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs (Max) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 72 nC | 1 V | 8-PowerVDFN | 2.4 W 41 W | P-Channel | 1.5 V 4.5 V | Surface Mount | -55 °C | 150 °C | 6909 pF | 8 mOhm | MOSFET (Metal Oxide) | 14 A 54 A | POWERDI3333-8 | 8 V | 20 V |