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N-Channel MOSFET
| Part | Mounting Type | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | FET Feature | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Package / Case | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | Surface Mount | 2 N-Channel (Dual) Common Drain | 856 pF | 900 mV | 28 mOhm | Logic Level Gate | 980 mW | 8.3 nC | MOSFET (Metal Oxide) | -55 °C | 150 °C | 20 V | SOT-23-6 | SOT-26 | 4.2 A |