FDFS2P106A Series

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode, -60V, -3.0 A, 110 mΩ

Catalog

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode, -60V, -3.0 A, 110 mΩ

Part	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	FET Feature	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Mounting Type	FET Type	Gate Charge (Max)	Vgs (Max)	Technology	Vgs(th) (Max)	Package Name	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Package Length	Package Width
ON Semiconductor FDFS2P106A	110 mOhm	-55 °C	150 °C	60 V	Schottky Diode (Isolated)	10 V	4.5 V	714 pF	Surface Mount	P-Channel	21 nC	20 V	MOSFET (Metal Oxide)	3 V	8-SOIC	900 mW	3 A	0.154 in	3.9 mm

Catalog

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode, -60V, -3.0 A, 110 mΩ

Key Features

-3.0A, -60 V

• RDS(on)= 110 mΩ@ VGS= -10 V

• RDS(on)= 140 mΩ @ VGS= -4.5 V

• VF< 0.53 V @ 1 A

• VF< 0.45 V @ 1 A (TJ= 125°C)

• VF< 0.62 V @ 2 A

• Schottky and MOSFET incorporated into singlepower surface mount SO-8 package

• Electrically independent Schottky and MOSFETpinout for design flexibility

Description

The FDFS2P106A combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.