PSMN1R2 Series

N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Catalog

N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Part	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Package Name	Package / Case	Input Capacitance (Ciss) (Max)	FET Type	Gate Charge (Max)	Power Dissipation (Max)	Mounting Type	FET Feature
Nexperia USA Inc. PSMN1R2-25YL,115	20 V	-55 °C	150 °C	1.2 mOhm	10 V	4.5 V	MOSFET (Metal Oxide)	2.15 V	100 A	25 V	LFPAK56 Power-SO8	4-LFPAK SOT-1023	6380 pF	N-Channel	105 nC	121 W	Surface Mount
Nexperia USA Inc. PSMN1R2-30YLC,115	20 V	-55 °C	175 °C	1.25 mOhm	10 V	4.5 V	MOSFET (Metal Oxide)	1.95 V	100 A	30 V	LFPAK56 Power-SO8	SC-100 SOT-669	5093 pF	N-Channel	78 nC	215 W	Surface Mount
Nexperia USA Inc. PSMN1R2-25YLDX	20 V	-55 °C	175 °C	1.2 mOhm	10 V	4.5 V	MOSFET (Metal Oxide)	2.2 V	100 A	25 V	LFPAK56 Power-SO8	SC-100 SOT-669	4327 pF	N-Channel	60.3 nC	172 W	Surface Mount	Schottky Diode (Body)
Nexperia USA Inc. PSMN1R2-25YLC,115	20 V	-55 °C	175 °C	1.3 mOhm	10 V	4.5 V	MOSFET (Metal Oxide)	1.95 V	100 A	25 V	LFPAK56 Power-SO8	SC-100 SOT-669	4173 pF	N-Channel	66 nC 66 nC	179 W	Surface Mount
Nexperia USA Inc. PSMN1R2-30YLDX	20 V	-55 °C	175 °C	1.24 mOhm	10 V	4.5 V	MOSFET (Metal Oxide)	2.2 V	100 A	30 V	LFPAK56 Power-SO8	SC-100 SOT-669	4616 pF	N-Channel	68 nC	194 W	Surface Mount

Catalog

N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.