POWER MOSFET, P CHANNEL, 20 V, 15 A, 0.0082 OHM, SOIC, SURFACE MOUNT
| Part | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Technology | Mounting Type | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 1.2 V | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | 20 V | 12 V | 2.5 V 4.5 V | 8-SO | 2.5 W | 15 A | 7980 pF | 8.2 mOhm | MOSFET (Metal Oxide) | Surface Mount | P-Channel |