TK100A06N1 Series
Manufacturer: Toshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0027 Ω@10V, TO-220SIS, U-MOSⅧ-H
| Part | FET Type | Package Name | Power Dissipation (Max) | Operating Temperature | Mounting Type | Current - Continuous Drain (Id) (Tc) | Vgs(th) (Max) | Rds On (Max) | Gate Charge (Max) | Package / Case | Input Capacitance (Ciss) (Max) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | N-Channel | TO-220SIS | 45 W | 150 °C | Through Hole | 100 A | 4 V | 2.7 mOhm | 140 nC | TO-220-3 Full Pack | 10500 pF 10500 pF | 20 V | 10 V | 60 V | MOSFET (Metal Oxide) |