IMW65R040 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 46 A, 650 V, 0.036 OHM, TO-247
| Part | Rds On (Max) | Vgs (Max) Positive | Vgs (Max) Negative | Operating Temperature (Min) | Operating Temperature (Max) | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | FET Type | Package / Case | Gate Charge (Max) | Current - Continuous Drain (Id) (Tc) | Technology | Drain to Source Voltage (Vdss) | Package Name | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Power Dissipation (Max) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 36 mOhm | 23 V | -7 V | -55 °C | 175 °C | 5.6 V | 997 pF | N-Channel | TO-247-3 | 28 nC | 46 A | SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide) | 650 V | PG-TO247-3-40 | 20 V | 15 V | 172 W | Through Hole |