Catalog
60 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
60 V, P-channel Trench MOSFET
60 V, P-channel Trench MOSFET
| Part | Vgs (Max) | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | FET Type | Package / Case | Technology | Qualification | Package Name | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Grade | Gate Charge (Max) | Mounting Type | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 20 V | 713 pF | 2.5 V | 2.3 W 15 W | -55 °C | 175 °C | 60 V | P-Channel | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | AEC-Q101 | DFN2020MD-6 | 10 V | 4.5 V | Automotive | 18 nC | Surface Mount | 8 A | 3 A | 120 mOhm |