IS43TR82560 Series
Manufacturer: ISSI, Integrated Silicon Solution Inc
IC DRAM 2GBIT PAR 78TWBGA
| Part | Package Width | Package Name | Package Length | Package / Case | Operating Temperature (Min) | Operating Temperature (Max) | Clock Frequency | Memory Type | Memory Depth | Memory Width | Memory Size | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Write Cycle Time - Word | Write Cycle Time - Page | Technology | Memory Interface (Type) | Mounting Type | Access Time | Memory Format | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 10.5 mm | 78-TWBGA | 8 mm | 78-TFBGA | 0 °C | 95 °C | 667 MHz | Volatile | 256 M | 8 bit | 2 Gbit | 1.45 V | 1.283 V | 15 ns | 15 ns | SDRAM - DDR3L | Parallel | Surface Mount | 20 ns | DRAM | ||
ISSI, Integrated Silicon Solution Inc | 10.5 mm | 78-TWBGA | 8 mm | 78-TFBGA | -40 °C | 95 °C | 800 MHz | Volatile | 256 M | 8 bit | 2 Gbit | 1.45 V | 1.283 V | 15 ns | 15 ns | SDRAM - DDR3L | Parallel | Surface Mount | 20 ns | DRAM | ||
ISSI, Integrated Silicon Solution Inc | 10.5 mm | 78-TWBGA | 8 mm | 78-TFBGA | 0 °C | 95 °C | 667 MHz | Volatile | 256 M | 8 bit | 2 Gbit | 1.45 V | 1.283 V | 15 ns | 15 ns | SDRAM - DDR3L | Parallel | Surface Mount | 20 ns | DRAM | ||
ISSI, Integrated Silicon Solution Inc | 10.5 mm | 78-TWBGA | 8 mm | 78-TFBGA | 933 MHz | 256 M | 8 bit | 2 Gbit | SDRAM - DDR3 | Parallel | DRAM | |||||||||||
ISSI, Integrated Silicon Solution Inc | 10.5 mm | 78-TWBGA | 8 mm | 78-TFBGA | 0 °C | 95 °C | 667 MHz | Volatile | 256 M | 8 bit | 2 Gbit | 1.575 V | 1.425 V | 15 ns | 15 ns | SDRAM - DDR3 | Parallel | Surface Mount | 20 ns | DRAM | ||
ISSI, Integrated Silicon Solution Inc | 10.5 mm | 78-TWBGA | 8 mm | 78-TFBGA | -40 °C | 95 °C | 667 MHz | Volatile | 256 M | 8 bit | 2 Gbit | 1.575 V | 1.425 V | 15 ns | 15 ns | SDRAM - DDR3 | Parallel | Surface Mount | 20 ns | DRAM | ||
ISSI, Integrated Silicon Solution Inc | 10.5 mm | 78-TWBGA | 8 mm | 78-TFBGA | -40 °C | 95 °C | 800 MHz | Volatile | 256 M | 8 bit | 2 Gbit | 1.45 V | 1.283 V | 15 ns | 15 ns | SDRAM - DDR3L | Parallel | Surface Mount | 20 ns | DRAM | ||
ISSI, Integrated Silicon Solution Inc | 10.5 mm | 78-TWBGA | 8 mm | 78-TFBGA | 0 °C | 95 °C | 800 MHz | Volatile | 256 M | 8 bit | 2 Gbit | 1.45 V | 1.283 V | 15 ns | 15 ns | SDRAM - DDR3L | Parallel | Surface Mount | 20 ns | DRAM | AEC-Q100 | Automotive |
ISSI, Integrated Silicon Solution Inc | 10.5 mm | 78-TWBGA | 8 mm | 78-TFBGA | 0 °C | 95 °C | 667 MHz | Volatile | 256 M | 8 bit | 2 Gbit | 1.575 V | 1.425 V | 15 ns | 15 ns | SDRAM - DDR3 | Parallel | Surface Mount | 20 ns | DRAM | ||
ISSI, Integrated Silicon Solution Inc | 10.5 mm | 78-TWBGA | 8 mm | 78-TFBGA | -40 °C | 95 °C | 800 MHz | Volatile | 256 M | 8 bit | 2 Gbit | 1.575 V | 1.425 V | 15 ns | 15 ns | SDRAM - DDR3 | Parallel | Surface Mount | 20 ns | DRAM |