10ETS10 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 10A TO263AB
| Part | Current - Reverse Leakage | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Speed - Recovery Time | Voltage - Forward (Vf) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction (Min) | Operating Temperature - Junction (Max) | Mounting Type | Package / Case | Voltage - DC Reverse (Vr) (Max) | Technology | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 50 µA | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 1.1 V | 10 A | -40 °C | 150 °C | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1 kV | Standard | TO-263AB (D2PAK) |
Vishay General Semiconductor - Diodes Division | 500 µA | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 1.1 V | 10 A | -40 °C | 150 °C | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1 kV | Standard | TO-263AB (D2PAK) |
Vishay General Semiconductor - Diodes Division | 50 µA | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 1.1 V | 10 A | -40 °C | 150 °C | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1 kV | Standard | TO-263AB (D2PAK) |