MSC360SMA120 Series

1200V, 360 mOhm, Discrete mSiC™ MOSFET

Catalog

1200V, 360 mOhm, Discrete mSiC™ MOSFET

Part	Mounting Type	Package / Case	Package Name	Gate Charge (Max)	Rds On (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Package Leads	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Microchip Technology MSC360SMA120SCT/RM	Surface Mount	16-PowerSOP Module	16-PSMT
Microchip Technology MSC360SMA120B	Through Hole	TO-247-3	TO-247-3	21 nC	450 mOhm	-10 V	23 V	78 W	255 pF	-55 °C	175 °C	11 A	20 V	N-Channel	SiCFET (Silicon Carbide)	3.14 V	1200 V
Microchip Technology MSC360SMA120S	Surface Mount	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	TO-268	21 nC	450 mOhm	-10 V	23 V	82 W		-55 °C	175 °C	11 A	20 V	N-Channel	SiCFET (Silicon Carbide)	5 V	1200 V
Microchip Technology MSC360SMA120SCT/R	Surface Mount	16-PowerSOP Module	16-PSMT	21 nC	450 mOhm	-10 V	23 V	71 W	255 pF	-55 °C	175 °C	11 A	20 V	N-Channel	SiCFET (Silicon Carbide)	3.14 V	1200 V
Microchip Technology MSC360SMA120D/S
Microchip Technology MSC360SMA120SA				21 nC	450 mOhm	-10 V	23 V	71 W	255 pF	-55 °C	175 °C	11 A	20 V	N-Channel	SiCFET (Silicon Carbide)	3.14 V	1200 V
Microchip Technology MSC360SMA120SDT/R	Surface Mount		D2PAK TO-263-7	21 nC	450 mOhm	-10 V	23 V	92 W	258 pF	-55 °C	175 °C	12 A		N-Channel	SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)	5 V	1200 V	7 Leads	20 V	18 V

Catalog

1200V, 360 mOhm, Discrete mSiC™ MOSFET

Description

MSC360SMA120 is part of our newest family of mSiCTM MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.