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20 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) (Ta) | Vgs(th) (Max) | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Vgs (Max) | Rds On (Max) | Package Name | Gate Charge (Max) | Input Capacitance (Ciss) (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Technology | FET Type | Power Dissipation (Max) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 1.3 A | 900 mV | Surface Mount | -55 °C | 150 °C | 12 V | 210 mOhm | DFN0603-3 (SOT8013) | 2.3 nC | 144 pF | 20 V | 4.5 V | 1.8 V | MOSFET (Metal Oxide) | N-Channel | 4.7 W 300 mW | 0201 (0603 Metric) |