Gen IV SuperGaN Series
Manufacturer: Renesas Electronics Corporation
Beta
⌘K
GALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 3.6 A, 0.56 OHM, 5 NC, QFN, SURFACE MOUNT
| Part | Mounting Type | Package Length | Package Name | Package Width | Vgs (Max) | Package / Case | Power Dissipation (Max) | Gate Charge (Max) | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) | Technology | Current - Continuous Drain (Id) (Tc) | Operating Temperature (Min) | Operating Temperature (Max) | Rds On (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | Surface Mount | 5 mm | 8-PQFN | 6 mm | 10 V | 8-PowerTDFN | 13.2 W | 5 nC 5 nC | 414 pF | 2.8 V | GaNFET (Gallium Nitride) | 3.6 A | -55 °C | 150 °C | 560 mOhm | N-Channel | 6 V | 650 V |
Renesas Electronics Corporation | Surface Mount | 5 mm | 8-PQFN | 6 mm | 10 V | 8-PowerTDFN | 13.2 W | 5 nC 5 nC | 414 pF | 2.8 V | GaNFET (Gallium Nitride) | 3.6 A | -55 °C | 150 °C | 560 mOhm | N-Channel | 6 V | 650 V |