1N6479 Series

Catalog

DIODE GEN PURP 100V 1A DO213AB

Part	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Mounting Type	Current - Reverse Leakage	Voltage - Forward (Vf) (Max)	Technology	Capacitance	Voltage - DC Reverse (Vr) (Max)	Package / Case	Package Name	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division 1N6479-E3/97	175 °C	-65 °C	Surface Mount	10 µA	1.1 V	Standard	8 pF	100 V	DO-213AB MELF (Glass)	DO-213AB	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1 A
Vishay General Semiconductor - Diodes Division 1N6479HE3/97	175 °C	-65 °C	Surface Mount	10 µA	1.1 V	Standard	8 pF	100 V	DO-213AB MELF (Glass)	DO-213AB	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1 A
Vishay General Semiconductor - Diodes Division 1N6479-E3/96	175 °C	-65 °C	Surface Mount	10 µA	1.1 V	Standard	8 pF	100 V	DO-213AB MELF (Glass)	DO-213AB	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1 A