MOSFET 2N-CH 30V 8A 8SOIC
| Part | Current - Continuous Drain (Id) @ 25°C | FET Feature | Mounting Type | Package / Case | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Configuration | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Power - Max [Max] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc.  | 8 A  | Logic Level Gate  | Surface Mount  | 8-SOIC  | 3.9 mm  | 0.154 in  | 19 mOhm  | 2.4 V  | 2 N-Channel (Dual)  | 18 nC  | 8-SOIC  | MOSFET (Metal Oxide)  | -55 °C  | 150 °C  | 888 pF  | 2 W  | 30 V  | ||
Alpha & Omega Semiconductor Inc.  | Logic Level Gate  | Surface Mount  | 8-SOIC  | 3.9 mm  | 0.154 in  | 3 V  | 2 N-Channel (Dual)  | 8-SOIC  | MOSFET (Metal Oxide)  | -55 °C  | 150 °C  | 2300 pF  | 2 W  | 60 V  | 58 nC  | 25 mOhm  | |||
Alpha & Omega Semiconductor Inc.  | 8 A  | Surface Mount  | 8-SOIC  | 3.9 mm  | 0.154 in  | 19 mOhm  | 2.4 V  | 2 N-Channel (Dual)  | 18 nC  | 8-SOIC  | MOSFET (Metal Oxide)  | -55 °C  | 150 °C  | 888 pF  | 2 W  | 30 V  | |||
Alpha & Omega Semiconductor Inc.  | Logic Level Gate  | Surface Mount  | 8-SOIC  | 3.9 mm  | 0.154 in  | 3 V  | 2 N-Channel (Dual)  | 8-SOIC  | MOSFET (Metal Oxide)  | -55 °C  | 150 °C  | 540 pF  | 2 W  | 60 V  | 10.5 nC  | 56 mOhm  |