IS61WV51216EEALL Series

Catalog

SRAM 8MB,HIGH-SPEED/LOW POWER,ASYNC WITH ECC,512K X 16, 20NS,1.65V-2.2V, 48 BALL MBGA (6X8 MM), ROHS

Part	Memory Interface (Type)	Operating Temperature (Max)	Operating Temperature (Min)	Write Cycle Time - Page	Write Cycle Time - Word	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Technology	Memory Format	Package Length	Package Name	Package Width	Memory Depth	Memory Width	Memory Size	Memory Type	Package / Case	Mounting Type	Access Time
ISSI, Integrated Silicon Solution Inc IS61WV51216EEALL-20BLI	Parallel	85 °C	-40 °C	20 ns	20 ns	1.65 V	2.2 V	SRAM - Asynchronous	SRAM	6 mm	48-TFBGA	8 mm	512 K	16 bit	1 MB	Volatile	48-TFBGA	Surface Mount	20 ns