IXFR14N100Q2 Series

DiscMosfetN-CH HiPerFET-Polar ISOPLUS247

Catalog

DiscMosfetN-CH HiPerFET-Polar ISOPLUS247

Part	Gate Charge (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	FET Type	Package Name	Rds On (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Technology
LITTELFUSE IXFR14N100Q2	83 nC	Through Hole	-55 °C	150 °C	5 V	2700 pF	N-Channel	ISOPLUS247™	1.1 Ohm	1000 V	9.5 A	TO-247-3	10 V	30 V	200 W	MOSFET (Metal Oxide)

Catalog

DiscMosfetN-CH HiPerFET-Polar ISOPLUS247

Description

Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs. Advantages: Easy to mount High power density Space savings