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30 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Technology | Input Capacitance (Ciss) (Max) | Package Name | Mounting Type | FET Type | Current - Continuous Drain (Id) (Ta) | Gate Charge (Max) | Vgs (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs(th) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Package / Case | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | 43.2 pF | DFN1006B-3 | Surface Mount | P-Channel | 410 mA | 1.2 nC | 8 V | 30 V | 1.67 W 310 mW | 950 mV | -55 °C | 150 °C | 3-XFDFN | 4.5 V | 1.5 V | 1.4 Ohm |