IXFH32 Series

DiscMSFT NCh UltrJnctn XClass TO-247AD

Catalog

DiscMSFT NCh UltrJnctn XClass TO-247AD

Part	Vgs (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Technology	Package / Case	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Package Name	Mounting Type	FET Type	Vgs(th) (Max)
LITTELFUSE IXFH32N100X	30 V	4075 pF	10 V	220 mOhm	MOSFET (Metal Oxide)	TO-247-3	890 W	-55 °C	150 °C	32 A	1000 V	130 nC	TO-247	Through Hole	N-Channel	6 V
LITTELFUSE IXFH32N100X	30 V	4075 pF	10 V	220 mOhm	MOSFET (Metal Oxide)	TO-247-3	890 W	-55 °C	150 °C	32 A	1000 V	130 nC	TO-247	Through Hole	N-Channel	6 V
LITTELFUSE IXFH32N48Q	20 V	5200 pF	10 V		MOSFET (Metal Oxide)	TO-247-3	360 W	-55 °C	150 °C	32 A	480 V	300 nC	TO-247AD (IXFH)	Through Hole	N-Channel	4 V
LITTELFUSE IXFH32N48	20 V	5200 pF	10 V		MOSFET (Metal Oxide)	TO-247-3	360 W	-55 °C	150 °C	32 A	480 V	300 nC	TO-247AD (IXFH)	Through Hole	N-Channel	4 V
LITTELFUSE IXFH32N50	20 V	5700 pF	10 V	150 mOhm	MOSFET (Metal Oxide)	TO-247-3	360 W	-55 °C	150 °C	32 A	500 V	300 nC	TO-247AD (IXFH)	Through Hole	N-Channel	4 V
LITTELFUSE IXFH32N50Q	20 V	4925 pF	10 V	160 mOhm	MOSFET (Metal Oxide)	TO-247-3	360 W	-55 °C	150 °C	32 A	500 V	190 nC	TO-247AD (IXFH)	Through Hole	N-Channel	4.5 V

Catalog

DiscMSFT NCh UltrJnctn XClass TO-247AD

Description

The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Advantages: Easy assembly High Power density Space savings