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60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | FET Type | Power Dissipation (Max) | Technology | Vgs (Max) | Rds On (Max) | Package / Case | Input Capacitance (Ciss) (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Mounting Type | Package Name | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Gate Charge (Max) | Current - Continuous Drain (Id) (Ta) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | N-Channel | 4.7 W 300 mW | MOSFET (Metal Oxide) | 20 V | 800 mOhm 800 mOhm | 0201 (0603 Metric) | 39 pF | 10 V | 4.5 V | Surface Mount | DFN0603-3 (SOT8013) | -55 °C | 150 °C | 60 V | 2.5 V | 1.1 nC | 300 mA |