MSRTA60080 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 800V 600A 3TOWER
| Part | Package Name | Voltage - Forward (Vf) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - DC Reverse (Vr) (Max) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Speed - Recovery Time | Package / Case | Mounting Type | Current - Reverse Leakage | Diode Pair Count | Diode Configuration | Technology | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Three Tower | 1.2 V | 600 A | 800 V | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | Three Tower | Chassis Mount | 25 µA | 1 pair | Common Cathode | Standard | 150 °C | -55 °C |
GeneSiC Semiconductor |