Toshiba Semiconductor and Storage | 4.4 mm | 6-SOIC 6-SOP | 4 Leads | 0.173 in | 1 | Surface Mount | 300 mV | 80 V | 2 µs | 3 µs | Transistor | AC DC | 50 mA | 3750 VDC | 50 mA | 600 % | 100 % | 1.25 V | 125 °C | -55 °C | 3 µs | 3 µs |
Toshiba Semiconductor and Storage | 4.4 mm | 6-SOIC 6-SOP | 4 Leads | 0.173 in | 1 | Surface Mount | 300 mV | 80 V | 2 µs | 3 µs | Transistor | AC DC | 50 mA | 3750 VDC | 50 mA | 300 % | 100 % | 1.25 V | 125 °C | -55 °C | 3 µs | 3 µs |
Toshiba Semiconductor and Storage | 4.4 mm | 6-SOIC 6-SOP | 4 Leads | 0.173 in | 1 | Surface Mount | 300 mV | 80 V | 2 µs | 3 µs | Transistor | AC DC | 50 mA | 3750 VDC | 50 mA | 600 % | 50 % | 1.25 V | 125 °C | -55 °C | 3 µs | 3 µs |
Toshiba Semiconductor and Storage | 4.4 mm | 6-SOIC 6-SOP | 4 Leads | 0.173 in | 1 | Surface Mount | 300 mV | 80 V | 2 µs | 3 µs | Transistor | AC DC | 50 mA | 3750 VDC | 50 mA | 600 % | 200 % | 1.25 V | 125 °C | -55 °C | 3 µs | 3 µs |
Toshiba Semiconductor and Storage | 4.4 mm | 6-SOIC 6-SOP | 4 Leads | 0.173 in | 1 | Surface Mount | 300 mV | 80 V | 2 µs | 3 µs | Transistor | AC DC | 50 mA | 3750 VDC | 50 mA | 150 % | 50 % | 1.25 V | 125 °C | -55 °C | 3 µs | 3 µs |