N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology
N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology
N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology
| Part | Input Capacitance (Ciss) (Max) | Rds On (Max) | Power - Max (Ta) | Vgs(th) (Max) | Mounting Type | Current - Continuous Drain (Id) (Ta) | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Channel Count | Configuration | Configuration - Features | Package / Case | Technology | Package Name | FET Feature | Drain to Source Voltage (Vdss) | FET Type | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) (Tc) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 2110 pF | 9.4 mOhm | 53 W | 2.1 V | Surface Mount | 30 A | 15.7 nC | -55 °C | 175 °C | 2 | N-Channel | Dual | 8-LFPAK56 SOT-1205 | MOSFET (Metal Oxide) | LFPAK56D | Logic Level Gate | 40 V | |||||
 Nexperia USA Inc. | 1262 pF | 7.6 mOhm | 4 V | Surface Mount | 21 nC | -55 °C | 175 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | D2PAK | 40 V | N-Channel | 20 V | 10 V | 77 A | 86 W |