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20 V, 2 A P-channel Trench MOSFET
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20 V, 2 A P-channel Trench MOSFET
20 V, 2 A P-channel Trench MOSFET
| Part | Package Name | Vgs (Max) | Mounting Type | Package / Case | Rds On (Max) | Operating Temperature | Technology | Current - Continuous Drain (Id) (Ta) | Drain to Source Voltage (Vdss) | Qualification | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Grade | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | FET Type | Gate Charge (Max) | Vgs(th) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | TO-236AB | 8 V | Surface Mount | SC-59 SOT-23-3 TO-236-3 | 120 mOhm | 150 °C | MOSFET (Metal Oxide) | 2 A | 20 V | AEC-Q101 | 380 pF | 2.8 W 400 mW | Automotive | 2.5 V | 4.5 V | P-Channel | 6 nC | 1.1 V |