NLQ83 Series
Manufacturer: Insignis Technology Corporation
IC DRAM 8GBIT LVSTL 200FBGA
| Part | Technology | Memory Format | Access Time | Operating Temperature (Max) | Operating Temperature (Min) | Write Cycle Time - Word | Write Cycle Time - Page | Memory Type | Package / Case | Memory Interface (Type) | Clock Frequency | Memory Size | Package Length | Package Name | Package Width | Mounting Type | Memory Depth | Memory Width | Voltage - Supply (Range 2 Maximum) | Voltage - Supply (Range 1 Maximum) | Voltage - Supply (Range 2 Minimum) | Voltage - Supply (Range 1 Minimum) | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Insignis Technology Corporation | SDRAM - Mobile LPDDR4 | DRAM | 3.5 ns | 85 °C | 0 °C | 18 ns | 18 ns | Volatile | 200-WFBGA | LVSTL | 1.2 GHz | 1 GB | 10 mm | 200-FBGA | 14.5 mm | Surface Mount | 256 M | 32 bit | 1.95 V | 1.17 V | 1.7 V | 1.06 V | ||
Insignis Technology Corporation | SDRAM - Mobile LPDDR4 | DRAM | 3.5 ns | 85 °C | -40 °C | 18 ns | 18 ns | Volatile | 200-WFBGA | LVSTL | 1.6 GHz | 1 GB | 10 mm | 200-FBGA | 14.5 mm | Surface Mount | 256 M | 32 bit | 1.95 V | 1.17 V | 1.7 V | 1.06 V | ||
Insignis Technology Corporation | SDRAM - Mobile LPDDR4 | DRAM | 3.5 ns | 85 °C | 0 °C | 18 ns | 18 ns | Volatile | 200-WFBGA | LVSTL | 1.6 GHz | 1 GB | 10 mm | 200-FBGA | 14.5 mm | Surface Mount | 256 M | 32 bit | 1.95 V | 1.17 V | 1.7 V | 1.06 V | ||
Insignis Technology Corporation | SDRAM - Mobile LPDDR4 | DRAM | 3.5 ns | 85 °C | -40 °C | 18 ns | 18 ns | Volatile | 200-WFBGA | LVSTL | 1.2 GHz | 1 GB | 10 mm | 200-FBGA | 14.5 mm | Surface Mount | 256 M | 32 bit | 1.95 V | 1.17 V | 1.7 V | 1.06 V | ||
Insignis Technology Corporation | SDRAM - Mobile LPDDR4 | DRAM | 3.5 ns | 105 °C | -40 °C | 18 ns | 18 ns | Volatile | 200-WFBGA | LVSTL | 1.6 GHz | 1 GB | 10 mm | 200-FBGA | 14.5 mm | Surface Mount | 256 M | 32 bit | 1.95 V | 1.17 V | 1.7 V | 1.06 V | AEC-Q100 | Automotive |
Insignis Technology Corporation | SDRAM - Mobile LPDDR4 | DRAM | 3.5 ns | 85 °C | -40 °C | 18 ns | 18 ns | Volatile | 200-WFBGA | LVSTL | 1.6 GHz | 1 GB | 10 mm | 200-FBGA | 14.5 mm | Surface Mount | 256 M | 32 bit | 1.95 V | 1.17 V | 1.7 V | 1.06 V | ||
Insignis Technology Corporation | SDRAM - Mobile LPDDR4 | DRAM | 3.5 ns | 85 °C | 0 °C | 18 ns | 18 ns | Volatile | 200-WFBGA | LVSTL | 1.2 GHz | 1 GB | 10 mm | 200-FBGA | 14.5 mm | Surface Mount | 256 M | 32 bit | 1.95 V | 1.17 V | 1.7 V | 1.06 V | ||
Insignis Technology Corporation | SDRAM - Mobile LPDDR4 | DRAM | 3.5 ns | 85 °C | 0 °C | 18 ns | 18 ns | Volatile | 200-WFBGA | LVSTL | 1.6 GHz | 1 GB | 10 mm | 200-FBGA | 14.5 mm | Surface Mount | 256 M | 32 bit | 1.95 V | 1.17 V | 1.7 V | 1.06 V | ||
Insignis Technology Corporation | SDRAM - Mobile LPDDR4 | DRAM | 3.5 ns | 105 °C | -40 °C | 18 ns | 18 ns | Volatile | 200-WFBGA | LVSTL | 1.2 GHz | 1 GB | 10 mm | 200-FBGA | 14.5 mm | Surface Mount | 256 M | 32 bit | 1.95 V | 1.17 V | 1.7 V | 1.06 V | AEC-Q100 | Automotive |