MBR200 Series
Manufacturer: GeneSiC Semiconductor
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DIODE MODULES 30V 200A SCHOTTKY RECOVERY
| Part | Voltage - DC Reverse (Vr) (Max) | Package Name | Diode Pair Count | Diode Configuration | Technology | Current - Reverse Leakage | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Voltage - Forward (Vf) (Max) | Current - Average Rectified (Io) (per Diode) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | 30 V | Twin Tower | 1 pair | Common Anode | Schottky | 5 mA | 500 ns | 200 mA | 650 mV | 200 A | 150 °C | -55 °C | Chassis Mount | Twin Tower |
GeneSiC Semiconductor | 30 V | Twin Tower | 1 pair | Common Anode | Schottky | 5 mA | 500 ns | 200 mA | 650 mV | 200 A | 150 °C | -55 °C | Chassis Mount | Twin Tower |