Dual N-Channel Enhancement Mode MOSFET
Dual N-Channel Enhancement Mode MOSFET
| Part | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Input Capacitance (Ciss) (Max) @ Vds | Power - Max [Max] | Mounting Type | Configuration | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 8-SO | 5.2 A | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 945 pF | 1.42 W | Surface Mount | 2 N-Channel (Dual) | 40 V | -55 °C | 150 °C | 3 V | 31 mOhm | 18.6 nC | |
Diodes Inc | 8-SO | 5.2 A | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 945 pF | 1.42 W | Surface Mount | 2 N-Channel (Dual) | 40 V | -55 °C | 150 °C | 3 V | 31 mOhm | 18.6 nC | Logic Level Gate |