IMBF170 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 9.8 A, 1.7 KV, 0.364 OHM, TO-263 (D2PAK)
| Part | Input Capacitance (Ciss) (Max) | Gate Charge (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Current - Continuous Drain (Id) (Tc) | Package Leads | Package Name | Technology | Mounting Type | Vgs (Max) Negative | Vgs (Max) Positive | FET Type | Operating Temperature (Min) | Operating Temperature (Max) | Vgs(th) (Max) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 610 pF | 11 nC | 15 V | 12 V | 9.8 A | 7 Leads | D2PAK PG-TO263-7-13 | SiCFET (Silicon Carbide) | Surface Mount | -10 V | 20 V | N-Channel | -55 °C | 175 °C | 5.7 V | 107 W | 1700 V | 450 mOhm |
 INFINEON | 422 pF | 8 nC | 15 V | 12 V | 7.4 A | 7 Leads | D2PAK PG-TO263-7-13 | SiCFET (Silicon Carbide) | Surface Mount | -10 V | 20 V | N-Channel | -55 °C | 175 °C | 5.7 V | 88 W | 1700 V | 650 mOhm |