High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.3 Ω@10V, D2PAK, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.3 Ω@10V, D2PAK, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.3 Ω@10V, D2PAK, DTMOSⅣ
| Part | Power Dissipation (Max) | FET Type | Vgs(th) (Max) | Technology | Package Name | Operating Temperature | Package / Case | Current - Continuous Drain (Id) (Ta) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Rds On (Max) | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 130 W | N-Channel | 4.5 V | MOSFET (Metal Oxide) | D2PAK | 150 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 13.7 A | 650 V | 10 V | 30 V | Surface Mount | 300 mOhm | 40 nC |