MBR40040 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 40V 200A 2TOWER
| Part | Current - Average Rectified (Io) (per Diode) | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Package / Case | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Package Name | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) | Mounting Type | Technology | Current - Reverse Leakage | Diode Pair Count | Diode Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 200 A | 500 ns | 200 mA | Twin Tower | 150 °C | -55 °C | Twin Tower | 40 V | 600 mV | Chassis Mount | Schottky | 3 mA | 1 pair | Common Anode |
GeneSiC Semiconductor | 200 A | 500 ns | 200 mA | Twin Tower | 150 °C | -55 °C | Twin Tower | 40 V | 650 mV | Chassis Mount | Schottky | 5 mA | 1 pair | Common Anode |
GeneSiC Semiconductor | 200 A | 500 ns | 200 mA | Twin Tower | 150 °C | -55 °C | Twin Tower | 40 V | 600 mV | Chassis Mount | Schottky | 3 mA | 1 pair | Common Anode |
GeneSiC Semiconductor | 200 A | 500 ns | 200 mA | Twin Tower | 150 °C | -55 °C | Twin Tower | 40 V | 600 mV | Chassis Mount | Schottky | 3 mA | 1 pair | Common Cathode |
GeneSiC Semiconductor | 200 A | 500 ns | 200 mA | Twin Tower | 150 °C | -55 °C | Twin Tower | 40 V | 650 mV | Chassis Mount | Schottky | 5 mA | 1 pair | Common Cathode |
GeneSiC Semiconductor | 200 A | 500 ns | 200 mA | Twin Tower | 150 °C | -55 °C | Twin Tower | 40 V | 650 mV | Chassis Mount | Schottky | 5 mA | 1 pair | Common Cathode |
GeneSiC Semiconductor | 200 A | 500 ns | 200 mA | Twin Tower | 150 °C | -55 °C | Twin Tower | 40 V | 600 mV | Chassis Mount | Schottky | 3 mA | 1 pair | Common Cathode |
GeneSiC Semiconductor | 200 A | 500 ns | 200 mA | Twin Tower | 150 °C | -55 °C | Twin Tower | 40 V | 650 mV | Chassis Mount | Schottky | 5 mA | 1 pair | Common Anode |