DGD1003 Series

HALF-BRIDGE GATE DRIVER IN V-DFN3035-8

Catalog

HALF-BRIDGE GATE DRIVER IN V-DFN3035-8

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Type	Channel Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Logic Voltage - VIL, VIH	Supplier Device Package	Number of Drivers	Input Type	Driven Configuration
Diodes Inc DGD1003FTA-13	-40 °C	125 °C	IGBT N-Channel MOSFET	Independent	290 mA	600 mA	35 ns	70 ns	20 V	10 VDC	8-VDFN	150 V	Surface Mount	0.8 V 2.5 V	V-DFN3035-8	2	Non-Inverting	Half-Bridge

Catalog

HALF-BRIDGE GATE DRIVER IN V-DFN3035-8

Key Features

• Floating High-Side Driver in Bootstrap Operation to 150V

• Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuration

• 290mA Source/600mA Sink Output Current Capability

• Outputs Tolerant to Negative Transients

• Internal Dead Time of 420ns to Protect MOSFETs

• Wide Low Side Gate Driver Supply Voltage: 10V to 20V

• Logic Input (HIN and LIN*) 3.3V Capability

• Schmitt Triggered Logic Inputs

• Undervoltage Lockout for VCC (Logic and Low Side Supply)

• Extended Temperature Range: -40°C to +125°C

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

The DGD1003 is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD1003’s high side to switch to 150V in a bootstrap operation.