TRANS NPN 50V 2A TO92MOD
| Part | Mounting Type | Vce Saturation (Max) @ Ib, Ic | Frequency - Transition | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Package / Case | Transistor Type | Operating Temperature | Supplier Device Package | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage  | Through Hole  | 500 mV  | 100 MHz  | 70  | 2 A  | 900 mW  | 50 V  | 1 µA  | TO-226-3  TO-92-3 Long Body  | NPN  | 150 °C  | TO-92MOD  | 
Toshiba Semiconductor and Storage  | Through Hole  | 500 mV  | 100 MHz  | 70  | 2 A  | 900 mW  | 50 V  | 1 µA  | TO-226-3  TO-92-3 Long Body  | NPN  | 150 °C  | TO-92MOD  | 
Toshiba Semiconductor and Storage  | Through Hole  | 500 mV  | 100 MHz  | 70  | 2 A  | 900 mW  | 50 V  | 1 µA  | TO-226-3  TO-92-3 Long Body  | NPN  | 150 °C  | TO-92MOD  | 
Toshiba Semiconductor and Storage  | Through Hole  | 500 mV  | 100 MHz  | 70  | 2 A  | 900 mW  | 50 V  | 1 µA  | TO-226-3  TO-92-3 Long Body  | NPN  | 150 °C  | TO-92MOD  | 
Toshiba Semiconductor and Storage  | Through Hole  | 500 mV  | 100 MHz  | 70  | 2 A  | 900 mW  | 50 V  | 1 µA  | TO-226-3  TO-92-3 Long Body  | NPN  | 150 °C  | TO-92MOD  | 
Toshiba Semiconductor and Storage  | Through Hole  | 500 mV  | 100 MHz  | 70  | 2 A  | 900 mW  | 50 V  | 1 µA  | TO-226-3  TO-92-3 Long Body  | NPN  | 150 °C  | TO-92MOD  | 
Toshiba Semiconductor and Storage  | Through Hole  | 500 mV  | 100 MHz  | 70  | 2 A  | 900 mW  | 50 V  | 1 µA  | TO-226-3  TO-92-3 Long Body  | NPN  | 150 °C  | TO-92MOD  |