IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 8 MOHM;
| Part | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Package / Case | Power Dissipation (Max) | Technology | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 75 A | TO-220AB | 2880 pF | Through Hole | 60 nC | 55 V | TO-220-3 | 130 W | MOSFET (Metal Oxide) | N-Channel | -55 °C | 175 ░C | 4.5 V 10 V | 8 mOhm | 3 V | 16 V |
Infineon Technologies | 75 A | D2PAK | 2880 pF | Surface Mount | 60 nC | 55 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 130 W | MOSFET (Metal Oxide) | N-Channel | -55 °C | 175 ░C | 4.5 V 10 V | 8 mOhm | 3 V | 16 V |
Infineon Technologies | 75 A | TO-262 | 2880 pF | Through Hole | 60 nC | 55 V | I2PAK TO-262-3 Long Leads TO-262AA | 130 W | MOSFET (Metal Oxide) | N-Channel | -55 °C | 175 ░C | 4.5 V 10 V | 8 mOhm | 3 V | 16 V |
Infineon Technologies | 75 A | TO-220AB | 2880 pF | Through Hole | 60 nC | 55 V | TO-220-3 | 130 W | MOSFET (Metal Oxide) | N-Channel | -55 °C | 175 ░C | 4.5 V 10 V | 8 mOhm | 3 V | 16 V |