JAN2N3868S-Transistor Series

PNP Silicon Low-Power -40V to -60V, -3A

Catalog

PNP Silicon Low-Power -40V to -60V, -3A

Part	Current - Collector Cutoff (Max)	Package Name	Package / Case	Qualification	Grade	Mounting Type	Vce Saturation (Max)	DC Current Gain (hFE) (Min)	Power - Max	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Transistor Type
Microchip Technology JAN2N3868S	100 µA	TO-39 (TO-205AD)	TO-205AD TO-39-3 Metal Can	350 MIL-PRF-19500	Military	Through Hole	1.5 V	30	1 VA	60 V	0.003 A	-65 °C	200 °C	PNP

Catalog

PNP Silicon Low-Power -40V to -60V, -3A

Description

This specification covers the performance requirements for PNP, silicon, switching 2N3867 and 2N3868 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500/350. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated (die) device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels.