PSMN4R5 Series

N-channel 30 V, 4.8 mΩ logic level MOSFET in LFPAK using NextPower technology

Catalog

N-channel 30 V, 4.8 mΩ logic level MOSFET in LFPAK using NextPower technology

Part	Gate Charge (Max)	Power Dissipation (Max)	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Drain to Source Voltage (Vdss)	Package Name	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Technology	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)
Nexperia USA Inc. PSMN4R5-80YSFX	90 nC	238 W	N-Channel	10 V	7 V	4.5 mOhm	80 V	LFPAK56 Power-SO8	100 A	20 V	6009 pF	SC-100 SOT-669	-55 °C	175 °C	Surface Mount	MOSFET (Metal Oxide)	4 V
Nexperia USA Inc. PSMN4R5-30YLC,115	20.5 nC	61 W	N-Channel	10 V	4.5 V	4.8 mOhm	30 V	LFPAK56 Power-SO8	84 A	20 V	1324 pF	SC-100 SOT-669	-55 °C	175 °C	Surface Mount	MOSFET (Metal Oxide)	1.95 V
Nexperia USA Inc. PSMN4R5-40BS,118	42.3 nC	148 W	N-Channel			4.5 mOhm	40 V	D2PAK	100 A	20 V	2683 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 °C	Surface Mount	MOSFET (Metal Oxide)	4 V	10 V
Nexperia USA Inc. PSMN4R5-40PS,127	42.3 nC	148 W	N-Channel			4.6 mOhm	40 V	TO-220AB	100 A	20 V	2683 pF	TO-220-3	-55 °C	175 °C	Through Hole	MOSFET (Metal Oxide)	4 V	10 V

Catalog

N-channel 30 V, 4.8 mΩ logic level MOSFET in LFPAK using NextPower technology

Description

Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.